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| Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A 5.00.2 Unit: mm 4.00.2 q q Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). (Ta=25C) Ratings 30 60 25 50 5 1.5 1 750 150 -55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD592 2SD592A 2SD592 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW C C 2.540.15 123 2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD592 2SD592A 2SD592 2SD592A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 Unit A V 30 60 25 50 5 85 50 0.2 0.85 200 20 *2 V V 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 0.4 1.2 V V MHz pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.0 1.50 Ta=25C 2SD592, 2SD592A IC -- VCE 1.2 VCE=10V Ta=25C 1.0 IC -- I B Collector power dissipation PC (W) Collector current IC (A) 1.00 8mA 7mA 6mA 5mA 4mA Collector current IC (A) 0.8 1.25 IB=10mA 9mA 0.8 0.6 0.75 0.6 0.4 0.50 3mA 2mA 0.4 0.2 0.25 1mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=10 600 hFE -- IC VCE=10 Forward current transfer ratio hFE 500 400 300 Ta=75C 200 25C 100 -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 30 100 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 Cob -- VCB 50 120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=10mA Ta=25C 100 160 Collector output capacitance Cob (pF) VCB=10V Ta=25C Transition frequency fT (MHz) 40 80 120 30 60 2SD592A 40 2SD592 20 80 20 40 10 0 -1 0 -3 -10 -30 -100 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=10V 2SD592, 2SD592A 103 ICEO (Ta) ICEO (Ta=25C) 102 10 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 3 |
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